http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201351659-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2a23b4d59486506884f0f836376c33f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2012-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15ff3a500903c7cc52221832dca6da2a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2782b2326587e28103d3a4157142a62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_008255e76194668fd879fdf2e8fa5788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90b81ba6863d48de6d3c0cfdc07f17ba |
| publicationDate | 2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201351659-A |
| titleOfInvention | Thin film transistor and method of manufacturing same |
| abstract | The invention provides a thin film transistor and a method of manufacturing the same. The method comprises forming a gate, a gate insulating layer, a semiconductor layer and a doped semiconductor layer on a substrate, and then performing plasma nitriding treatment to form a Si-N weak bond on the surface of the doped semiconductor layer, followed by deposition. The second metal layer is etched to form a source, a drain and expose a semiconductor layer between the source and the drain. Since the Si-N weak bond has been formed on the doped semiconductor layer before the deposition of the second metal layer, this method avoids the formation of a bond between the second metal layer and the germanium atom in the doped semiconductor layer, and thus reduces The contact resistance also prevents the etching rate from becoming slow and causes etching residue. |
| priorityDate | 2012-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.