| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
2013-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23d3487f57297af5ebd34e270db4d00f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c910a38e71795ab60e1e75bb0082e048 |
| publicationDate |
2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201351595-A |
| titleOfInvention |
Semiconductor device and preparation method thereof |
| abstract |
A semiconductor device includes a substrate, a conductive material, and a material layer. The substrate includes a through hole. A conductive material is filled in the through hole. A material layer is formed in the conductive material, wherein the conductive material has a resistance value lower than a resistance value of the material layer. The conductive material is filled with a new fast filling method, and the conductive material has high quality and is seamless or seamless. |
| priorityDate |
2012-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |