| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31da94917d1067c89f7e22444c88a836 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2012-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0d1645f4f64ad56122203acb0f2ae9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b595132ceeb8f79bcc09c56ba6c1fbc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34a4793a3cf4a95f28d28a59ec051b86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb253ed901d7bcabc7fa8ece2be62756 |
| publicationDate |
2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201351509-A |
| titleOfInvention |
Semiconductor device with improved gate height uniformity and method of fabricating the same |
| abstract |
Several types of semiconductor devices and methods for fabricating the same are provided. In one embodiment, a method for fabricating a semiconductor device includes forming a temporary gate structure comprising a polysilicon gate and a cap on a surface of a semiconductor. A spacer is formed around the temporary gate structure. The cap and a portion of the spacer are removed. A uniform lining overlying the polysilicon gate is deposited. The method removes a portion of the uniform liner overlying the polysilicon gate and the polysilicon gate to form a gate trench. A replacement metal gate is then formed in the gate trench. |
| priorityDate |
2012-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |