| abstract |
The present invention relates to a substrate having a transparent electrode having a transparent electrode layer on at least one side of a transparent film substrate. The transparent film substrate has a transparent dielectric layer containing an oxide as a main component on the surface on the side of the transparent electrode layer. In one embodiment, the transparent electrode layer is a crystalline transparent electrode layer having a crystallinity of 80% or more. The crystalline transparent electrode layer of this embodiment preferably has a resistivity of 3.5×10 −4 Ω. Below cm, the film thickness is 15 nm to 40 nm, the indium oxide content is 87.5% to 95.5%, the carrier density is 4×10 20 /cm 3 to 9×10 20 /cm 3 , and the substrate having the transparent electrode is determined by thermomechanical analysis. The heat shrinkage onset temperature is from 75 ° C to 120 ° C. |