http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201347225-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d7f8eeae21f41693a09002fe88edd810 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2012-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f15b1f744fbbddcc0117dc34fd75497 |
| publicationDate | 2013-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201347225-A |
| titleOfInvention | Vertical type light emitting diode and manufacturing method thereof |
| abstract | The present invention relates to a vertical-type light-emitting diode and a manufacturing method thereof. The vertical-type light-emitting diode of the present invention is characterized in that after the light-emitting epitaxial layer completes most of the wafer structure, the front surface of the wafer is plated with an insulating layer. The wafer is bonded to the support substrate, and after mechanically grinding the sapphire substrate on the back side of the wafer to a certain thickness, a rough surface is formed by plasma dry etching on the surface thereof, and then a via hole is formed on the sapphire substrate, and then used. The metal backfills the through holes to electrically connect the upper and lower sides. The invention retains the sapphire substrate, avoids the cumbersome technical difficulty of the luminescent epitaxial layer damage caused by the laser stripping of the substrate by the vertical structure and the cumbersome elimination of the flip-chip structure of the light-emitting diode. The high heat dissipation wafer bonding substrate reduces thermal resistance and the highly reflective DBR layer increases light extraction efficiency. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I765231-B |
| priorityDate | 2012-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.