http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201347195-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2010-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate | 2013-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201347195-A |
| titleOfInvention | Semiconductor device and method of manufacturing same |
| abstract | It is an object of the invention to provide a semiconductor device having a lower power consumption as a semiconductor device including a thin film transistor using an oxide semiconductor layer. It is an object of the invention to provide a semiconductor device having high reliability as a semiconductor device including a thin film transistor using an oxide semiconductor layer. In the semiconductor device, the gate electrode layer (gate wiring layer) intersects with the wiring layer, and the wiring layer is electrically connected to the source electrode layer or the gate electrode layer to cover the insulating layer of the oxide semiconductor layer of the thin film transistor and The gate insulating layer is interposed therebetween. Therefore, the parasitic capacitance formed by the stacked electrode structure of the gate electrode layer, the gate insulating layer, and the source or drain electrode layer can be reduced, so that low power consumption of the semiconductor device can be achieved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I699835-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I643174-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9647140-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105742168-B |
| priorityDate | 2009-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.