| abstract |
A semiconductor device comprising a semiconductor device mounted on a substrate, an electrode pad provided with a main component of aluminum as a semiconductor element, and a copper wire provided with a copper as a main component and connected to the electrode pad provided on the substrate, And sealing the semiconductor element and the sealing resin of the copper wire. In such a semiconductor device, when it is heated at 200 ° C for 16 hours in the atmosphere, a barrier layer of a metal selected from either palladium or platinum is formed at a joint portion between the copper wire and the electrode pad. |