http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201344943-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9c12ab86c9344c1de6e324177995c149
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0749
filingDate 2012-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eeea5ae4aa8c718a1a2bf450cc47ab74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88f67039e61b0300eee361e09c89bea5
publicationDate 2013-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201344943-A
titleOfInvention Stacked copper zinc tin selenide sulfur thin film solar cell and manufacturing method thereof
abstract The invention provides a method for manufacturing a stacked copper zinc tin selenide sulfur thin film solar cell, which sequentially forms a sulfur compound layer, a cuprous selenide layer and a tin zinc layer on the back electrode layer, and is subjected to selenization and sulfurization reaction. The selenium-containing sulfur compound layer and the selenium sulfide solar energy absorbing layer are deposited, and the n-type buffer layer and the top electrode layer are deposited to prepare a stacked copper zinc tin selenide thin film solar cell, wherein the selenium sulfide solar energy absorbing layer comprises a low energy gap copper zinc tin The selenium layer is sandwiched between two high energy gap copper, zinc, tin and selenium layers to form a stacked solar absorber layer. In addition, the present invention also provides a stacked copper zinc tin selenide sulfur thin film solar cell, which improves the light absorptivity and reduces the electron/hole recombination rate through the stacked solar energy absorbing layer, thereby improving the stacked copper zinc tin selenide sulfur thin film solar cell. Photoelectric properties.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10014423-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10790398-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I488312-B
priorityDate 2012-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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