| abstract |
The present invention discloses an atomic layer deposition (ALD) method for forming tantalum oxide by a temperature of >500 °C. The ruthenium precursor used has the formula: I. R1R2mSi(NR3R4)nXp wherein R1, R2 and R3 are each independently selected from hydrogen, linear or branched C1 to C10 alkyl and C6 to C10 aryl; R4 is selected from linear Or a C1 to C10 alkyl group and a C6 to C10 aryl group, a C3 to C10 alkyl decyl group; wherein R3 and R4 are bonded to form a cyclic ring structure or R3 and R4 are not joined to form a cyclic ring structure; a halogen group selected from the group consisting of Cl, Br, and I; m is 0 to 3; n is 0 to 2; and p is 0 to 2 and m+n+p=3; and II. R1R2mSi (OR3 n(OR4)qXp wherein R1 and R2 are each independently selected from hydrogen, linear or branched C1 to C10 alkyl and C6 to C10 aryl; and R3 and R4 are each independently selected from linear or branched C1 to C10 alkyl. And a C6 to C10 aryl group; wherein R3 and R4 are bonded to form a cyclic ring structure or R3 and R4 are not joined to form a cyclic ring structure; X is selected from the group consisting of Cl, Br and I. Base; m is 0 to 3; n is 0 to 2; q is 0 to 2 and p is 0 to 2 and m+n+q+p=3. |