| abstract |
A complementary metal oxide semiconductor nanowire structure is described. For example, a semiconductor structure includes a first semiconductor device, and the first semiconductor device includes a first nanowire disposed above a substrate, the first nanowire having a midpoint at a first distance above the substrate and including a separate channel region, and the source and drain regions are on each side of the separate channel region, and a first gate electrode stack completely surrounds the separate channel region The semiconductor structure also includes a second semiconductor device including a second nanowire disposed on the substrate, the second nanowire having a midpoint at a second distance above the substrate, and including a A separate channel region, and the source and the germanium region are on each side of the separate channel region, the first distance being different from the second distance, and the second gate electrode stack completely surrounding the separate channel region of the second nanowire. |