| abstract |
The present invention describes a method of depositing an initially flowable dielectric film on a substrate. The methods include introducing a ruthenium containing precursor into a deposition chamber containing a substrate. The methods further include generating a precursor of at least one excited state, such as a radical nitrogen precursor or a radical oxygen precursor, using a remote plasma system positioned outside the deposition chamber. The excited state precursor is also introduced into the deposition chamber, and in the reaction zone of the deposition chamber, the excited state precursor reacts with the ruthenium containing precursor to deposit an initial flowable film on the substrate. The flowable film can be treated, for example, in a vapor environment to form a yttria film. |