| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4991 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772 |
| filingDate |
2013-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcb9f8ec4a3a86db8a1e4e17a54e32ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f05b82d6a663f9119e7cd84ce1893ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34729f78ca342662152946fbe6092081 |
| publicationDate |
2013-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201340295-A |
| titleOfInvention |
Semiconductor component and method of manufacturing same |
| abstract |
A semiconductor device and a method of fabricating the same include a gate insulating film pattern over a semiconductor substrate. A gate electrode is formed over the gate insulating film pattern. A spacer structure is formed on at least one side of the gate electrode and the gate insulating film pattern. The spacer structure includes: a first insulating film spacer contacting the gate insulating film pattern; and a second insulating film spacer on an outer side of the first insulating film spacer. The semiconductor element has an air gap between the first insulating film spacer and the second insulating film spacer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I636524-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I800120-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163704-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106898597-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110098175-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11443984-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107017204-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10734283-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106898597-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10164029-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879364-B2 |
| priorityDate |
2012-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |