http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201335997-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate | 2013-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4df93516e6316f336ee75903901a2ece http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68eb00fecc58feb2bb9b7dc5c6a99b6c |
| publicationDate | 2013-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201335997-A |
| titleOfInvention | Method and apparatus for processing substrates |
| abstract | A method and apparatus for processing a substrate is provided herein. In some embodiments, a method for processing a substrate disposed in a processing chamber includes: performing a process on a substrate disposed in a processing chamber, the processing chamber having a substrate support ring and a reflector The substrate support ring is configured to support the substrate, and the reflective plate is disposed adjacent to a back side of the substrate; the first gas is supplied to a back side of the substrate through one or more through holes while the Treating on the substrate, the first gas comprises one of an oxygen-containing gas or a nitrogen-containing gas, the through hole is disposed on the reflecting plate; and the processing chamber is maintained at a first pressure and a second pressure The first pressure is near an upper surface of the substrate and the second pressure is near the bottom surface of the substrate, wherein the first pressure is greater than the second pressure during processing sufficient to prevent the substrate from moving from the substrate support ring Bit. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11725283-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I656234-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11441222-B2 |
| priorityDate | 2012-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.