http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201334056-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
filingDate 2012-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12a8dc53697a9aa533b75f401ecb5452
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publicationDate 2013-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201334056-A
titleOfInvention Method for manufacturing semiconductor substrate product and etching method therefor
abstract The present invention provides a method of manufacturing a semiconductor substrate product. The method for producing a semiconductor substrate article of the present invention comprises the steps of: preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; preparing a crucible composed of a polycrystalline germanium film or an amorphous germanium film a semiconductor substrate of the film; and heating the aqueous solution to 80 ° C or higher and applying to the semiconductor substrate to etch at least a portion of the ruthenium film.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I695055-B
priorityDate 2011-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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