http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201333282-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_817cdee219ee094a8402a8e63e072164 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B28-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 |
| filingDate | 2013-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a1564be82b3802a3168136202398ace http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4c23bef9260a1e18ab033eea048e4df |
| publicationDate | 2013-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201333282-A |
| titleOfInvention | Method for preparing as-cast bismuth by directional solidification |
| abstract | The present invention provides a method of preparing an as-cast bismuth crystal ingot. The method includes feeding a tantalum spacer to a bottom surface of the crucible; disposing a single crystal twin seed on the tantalum spacer such that a surface of the single crystal germanium material does not contact the bottom surface of the tantalum; Feeding into the crucible; and applying heat through at least one of the opening and the at least one sidewall to form a partially molten crucible feed in the crucible. The as-cast germanium crystal ingot has a lateral dimension of not less than about 5 cm, and the as-cast germanium crystal ingot has a dislocation density of less than 1000 dislocations/cm 2 . The wafer cut from the as-cast germanium crystal ingot has a solar cell efficiency of at least 17.5% and a photoinduced degradation of no more than 0.2%. |
| priorityDate | 2012-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.