http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201333244-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-06 |
| filingDate | 2012-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07bdc9fb2f8af615a5a6d3240c3fd49d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d905d7cf3216784a1f39b9b9bdeda51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2c0b66ca2945da1c70d561af24d0686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2809cd669ba967b62d484dc307877831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b655cf16a73aa8becf505fb0e434ab64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_531383e3f947d81639d3f284d5acb2bb |
| publicationDate | 2013-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201333244-A |
| titleOfInvention | Chemical vapor deposition of tantalum film and its application |
| abstract | The present invention discloses a method for depositing a ruthenium containing film. In some embodiments, a method of depositing a germanium-containing film on a substrate can include: depositing a germanium-containing film on the substrate using the germanium-containing precursor, depositing carbon in the deposited germanium-containing film; and exposing the deposited germanium-containing layer At least some of the carbon is removed from the self-deposited ruthenium containing film in a hydrogen containing gas. In some embodiments, the ruthenium containing film exposed to the hydrogen containing gas may be subsequently exposed to an oxygen containing gas to achieve at least one of: removing at least some of the carbon from the ruthenium containing film; or adding oxygen to the ruthenium containing film. In some embodiments, deposition and exposure to a hydrogen containing gas and, if desired, an oxygen containing gas may be repeatedly performed to deposit a ruthenium containing film to a desired thickness. |
| priorityDate | 2011-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.