| abstract |
The present invention provides an etching composition comprising a phosphonium alkyl phosphate compound, phosphoric acid, and deionized water, and a method of fabricating a semiconductor device including an etching method using the etching composition. The nitride film of the etching composition of the present invention has high etching selectivity with respect to the oxide film. Therefore, when the etching composition of the present invention is used to remove a nitride film, the effective field oxide height (EFH) can be easily controlled by controlling the etching rate of the oxide film. In addition, it can prevent deterioration of electrical characteristics due to oxide film damage or oxide film etching, thereby ensuring the stability and reliability of the etching method. |