| abstract |
[Objective] When the joint portion of the wafer is bonded by eutectic bonding, an adhesive layer is prevented from being deteriorated by AuSn. [Solution] An adhesive layer 4 is formed on one surface of one wafer 1, and a diffusion prevention layer 7 formed of a material having low wettability for AuSn is stacked over the adhesive layer 4. Further, a bonding layer 8 is formed on one surface of the diffusion preventing layer 7 so as to be retracted from the edge of the diffusion preventing layer 7, whereby a joint portion 3 is formed on the surface of the wafer 1. At the same time, a joint portion 13 is provided on the lower surface of a wafer 11, and an AuSn solder layer 19 is provided under the joint portion 13. The AuSn solder layer 19 is melted, and the first joint portion and the second portion are joined by an AuSn solder 22 by AuSn eutectic bonding under the condition that the first wafer 1 and the second wafer 11 are opposed to each other. Joint. |