http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201330000-A

Outgoing Links

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-08
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C8-08
filingDate 2012-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_726608d1a2b6985ac5c0084b091acf4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_574bb03576b40f36c5a618582e16f3ac
publicationDate 2013-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201330000-A
titleOfInvention High voltage withstand column driver
abstract The circuit is configured to supply a first gate voltage (PG1) at the first bias voltage (VP1) to a source of the first transistor providing the output (WLS), the first bias voltage (VP1) being provided to a second transistor and providing a second bias voltage (VN1) and a second gate voltage (NG1) to the third transistor, the second transistor being coupled in series to the third transistor and in parallel with the first transistor to The third bias voltage (VP2) and the third gate voltage (PG2) are supplied to the fourth transistor and the fourth bias voltage (VN2) and the fourth gate voltage (NG2) are supplied to the fifth transistor, the fourth power The crystal is coupled in series to the fifth transistor, and the fourth transistor and the fifth transistor are coupled to the gate of the second transistor and provide a fifth bias voltage (VN3) to connect the third transistor to the fifth transistor The line of the crystal.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I736050-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I620048-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11296601-B2
priorityDate 2011-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 21.