| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F222-102 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F2-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D133-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-1811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C59-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D133-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-10 |
| filingDate |
2012-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba5e052a16207277f6bee559b5e26b5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c93e92cddfaff7b3d010f3e21d657fb4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4695b26ce8284dbdee4a8cda8403133d |
| publicationDate |
2013-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201329629-A |
| titleOfInvention |
Nano imprint method and resist composition for the nano imprint method |
| abstract |
[Objective] In order to suppress mold contamination caused by an adhering substance and form a resist pattern having sufficient etching resistance in the nanoimprint method. [Composition] The nanoimprint method uses a resist composition containing a polymerizable compound and a polymerization initiator, each of which has an absorption region ranging from 250 nm to 500 nm. Absorption spectrum characteristics within. The longer wavelength end wavelength (λi) of the absorption region of the polymerization initiator is longer than the longer wavelength end wavelength (λm) of the absorption region of the polymerizable compound. The exposure of the resist composition is performed by light whose spectral intensity characteristics satisfy a predetermined relationship. |
| priorityDate |
2011-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |