| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2012-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31e5c4269994dd446e5554816bac2297
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5dceac2f3e33308e991f080ba59e404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_338ff253c4506b5a194e898635c6b59e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acd0b01b5ea6cb68db2acb9eed51d305 |
| publicationDate |
2013-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201327680-A |
| titleOfInvention |
Semiconductor device manufacturing method and substrate processing system |
| abstract |
The present invention provides a method of manufacturing a semiconductor device, comprising: a first film forming step of forming a first high dielectric constant insulating film on a target object; and a crystallization heat treatment step of 650 ° C or higher Heat treatment of the first high dielectric constant insulating film for 60 seconds; and second film forming step of forming a second high dielectric insulating film on the first high dielectric insulating film, the second high The dielectric-rate insulating film has a metal element having an ionic radius smaller than an ionic radius of a metal element of the first high-dielectric-rate insulating film, and has a specific dielectric constant greater than that of the first high-k dielectric insulating film. |
| priorityDate |
2011-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |