| abstract |
The present invention relates to the use of a secondary hydrocarbon group having at least a direct bond to a ruthenium atom, having an organic ruthenium compound having a specific structure for a ruthenium atom and an oxygen atom of 0.5 or less as a raw material to be formed by CVD. A film composed of carbon-containing cerium oxide is used as a sealing film, and is used for a gas barrier member, an FPD device, a semiconductor device, or the like. |