| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2203-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2203-01 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 |
| filingDate |
2012-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d98295de6b47ce1f5b1605a7ecf9af06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e719ac35e184b31cab0b0e2df294550 |
| publicationDate |
2013-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201324779-A |
| titleOfInvention |
Semiconductor device and method of manufacturing semiconductor device |
| abstract |
When a semiconductor device having a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are laminated and provided with a source electrode layer and a gate electrode layer in contact with an oxide semiconductor film is fabricated, etching is performed by etching After the gate electrode layer or the source electrode layer and the gate electrode layer are formed by the process, a process of removing the residue remaining on the surface of the gate electrode layer or the surface of the oxide semiconductor film by the etching process and the vicinity thereof is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer may be 1 × 10 13 atoms/cm 2 or less. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I773852-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11205602-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I712134-B |
| priorityDate |
2011-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |