Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L33-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-04 |
filingDate |
2012-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfe58e5ebbbfe04cb962e57902f7c4e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bda610e3d51ab514daf7538f668089e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa485c7f56d146cd9f855a87b1388ab7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_962132911cf911e4cb5af4b286a88959 |
publicationDate |
2013-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201324038-A |
titleOfInvention |
Pattern forming method |
abstract |
The present invention relates to a pattern forming method applicable to line width of a photoresist pattern for downsizing lithography. The pattern forming method includes applying a photoresist composition to a substrate to form a photoresist film. The photoresist composition includes an acid generator and a first polymer including an acid cleavable group. The photoresist film was exposed. The photoresist film is developed using a developer having an organic solvent content of 80% by mass or more to form a predetermined pattern of the photoresist film. A polymer film having a phase separation structure in a space defined by the predetermined pattern is formed using a composition including a plurality of second polymers. A portion of the phase separation structure of the polymer film is removed. |
priorityDate |
2011-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |