| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2012-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e43b86994e1b50ba4642c7a2735bfa1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e75e16316c66415dca869e4f88f88af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cd421fe641da9cd74eccf80874f6ec5 |
| publicationDate |
2013-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201322426-A |
| titleOfInvention |
Semiconductor device manufacturing method and semiconductor device |
| abstract |
An object of the present invention is to improve the manufacturing yield of a semiconductor device having a plurality of field effect transistors having different characteristics from each other on the same substrate. The solution is to form three types of sidewalls (SWL, SWM, SWH) having different sidewall lengths by combining anisotropic dry etching and isotropic wet etching or isotropic dry etching. By reducing the number of times of anisotropic dry etching, it is possible to prevent adjacent gate electrodes (GLn) and gate electrodes (GLn) from being adjacent to each other in the third nMIS region and the third pMIS region having a high arrangement density. The semiconductor substrate (1) between the gate electrode (GLn) and the gate electrode (GLp) and between the adjacent gate electrode (GLp) and the gate electrode (GLp) is removed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107017251-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106972015-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106972015-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11563020-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I643263-B |
| priorityDate |
2011-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |