| abstract |
A semiconductor device comprising: a connecting member including a first pad, and the first pad is formed on one main surface of the connecting member; a semiconductor wafer including a circuit forming surface and a second pad Formed on the circuit forming surface, the wafer is mounted on the connecting member such that the circuit forming surface faces the main surface; and a solder bump connecting the first and second pads and containing Bi and Sn The metal is formed, wherein the bump comprises a first interface layer formed adjacent to the second pad, a second interface layer formed adjacent to the first pad, and a first layer formed adjacent to one of the interface layers An intermediate region, and a second intermediate region formed adjacent to the other intermediate layer in the interface layer and adjacent to the first intermediate region; a concentration of Bi in the first intermediate region is higher than a concentration of Sn; The concentration of Sn in the second intermediate region is higher than the concentration of Bi. |