http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201320353-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2012-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_694bce72f79fb89fe8e8b3e0be6f135e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a24ef0a839925e16402357081f651097
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publicationDate 2013-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201320353-A
titleOfInvention Amorphous oxide semiconductor thin film transistor manufacturing method
abstract The present invention provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source region, a drain region, and a channel region is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel region of the substrate, and a first metal layer over the dielectric layer. Hydrogen ions are implanted in the oxide semiconductor layer overlying the source region and the drain region of the substrate by a plasma immersion ion implantation process. The hydrogen ions are implanted into a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source region and the drain region of the substrate.
priorityDate 2011-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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