http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201320179-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
filingDate | 2012-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a97d54a269a38b417ebd4f6060d7730 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f10c8c4ea5f462f246c67ea57c1f9ba1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bca93727181d96879d15f9ae7cec0e2d |
publicationDate | 2013-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201320179-A |
titleOfInvention | Improved groove contour |
abstract | A method of etching a recess in a semiconductor substrate is described herein. The method can include forming a dielectric liner layer in a trench of the substrate, wherein the liner layer has a first density. The method can also include depositing a second dielectric layer, the second dielectric layer being at least partially disposed in the trench on the liner layer. The second dielectric layer is initially flowable after deposition and has a second density that is lower than the first density of the liner. The method can further include exposing the substrate to a dry etchant, wherein the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, wherein the dry etchant comprises a fluorochemical And molecular hydrogen, and wherein the etching rate ratio of removing the first dielectric liner layer and removing the second dielectric layer is about 1:1.2 to about 1:1. |
priorityDate | 2011-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.