http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201320179-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
filingDate 2012-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a97d54a269a38b417ebd4f6060d7730
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f10c8c4ea5f462f246c67ea57c1f9ba1
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publicationDate 2013-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201320179-A
titleOfInvention Improved groove contour
abstract A method of etching a recess in a semiconductor substrate is described herein. The method can include forming a dielectric liner layer in a trench of the substrate, wherein the liner layer has a first density. The method can also include depositing a second dielectric layer, the second dielectric layer being at least partially disposed in the trench on the liner layer. The second dielectric layer is initially flowable after deposition and has a second density that is lower than the first density of the liner. The method can further include exposing the substrate to a dry etchant, wherein the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, wherein the dry etchant comprises a fluorochemical And molecular hydrogen, and wherein the etching rate ratio of removing the first dielectric liner layer and removing the second dielectric layer is about 1:1.2 to about 1:1.
priorityDate 2011-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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