| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4efee27937b4a512f45809fed5293747
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb076911591120d8918089adb7f6ccab |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate |
2012-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddec0eae2e1412e9efb960334c77165d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_495b8053e27244599fdcc6184b645ef1 |
| publicationDate |
2013-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201320165-A |
| titleOfInvention |
Direct generation of graphene on semiconductor substrates |
| abstract |
SUMMARY OF THE INVENTION The present invention relates to a method of preparing a graphene layer directly on the surface of a semiconductor substrate. The method includes forming a carbon-containing layer on a surface of a semiconductor substrate and depositing a metal film on the carbon layer. Thermal cycling degrades the carbonaceous layer, which upon cooling forms graphene directly on the semiconductor substrate. In some embodiments, the carbon source is a carbon-containing gas, and the thermal cycle causes carbon atoms to diffuse into the metal thin film, and the carbon atoms are separately segregated and precipitated into a graphene layer on the semiconductor substrate after cooling. . |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I757243-B |
| priorityDate |
2011-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |