| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78651
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2012-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1529047f378776a1c4c296aff77d717b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5a79f4c83d6887d5708274a362a3a58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d98295de6b47ce1f5b1605a7ecf9af06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e612d86de1455fa5cb38cf2dd1e80739 |
| publicationDate |
2013-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201320164-A |
| titleOfInvention |
Semiconductor device |
| abstract |
The present invention reduces the concentration of an impurity element contained in the oxide semiconductor film in the vicinity of the gate insulating film. Further, the present invention improves the crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film. The present invention is a semiconductor device including: a base insulating film; an oxide semiconductor film formed on the base insulating film; a source electrode and a drain electrode formed on the oxide semiconductor film; and an oxide semiconductor film a gate insulating film containing tantalum oxide on the source electrode and the drain electrode; and a gate electrode that is in contact with the gate insulating film and disposed on a region overlapping at least the oxide semiconductor film, wherein the oxide The material semiconductor film has a region in which the germanium concentration from the dielectric insulating film to the inner side of the oxide semiconductor film is 1.0 at.% or less, and includes a crystal portion at least in the region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11699762-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I781043-B |
| priorityDate |
2011-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |