| abstract |
The present invention discloses a semiconductor device comprising a bump structure on a post-passivation interconnect (PPI) line and surrounded by a protective structure. The protective structure includes a polymer layer and at least one dielectric layer. The dielectric layer may be formed on the upper surface of the polymer layer, under the polymer layer, between the bump structure and the polymer layer, and between the wiring in the post passivation layer and the polymer layer. Covering the outer sidewall of the polymer layer or a combination thereof. |