http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201314907-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d9f3ca41550d315642580237250c5b0
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2012-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_752d216d4002d52c38168d3363115980
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a75a833ee32f64161f9f5d5c5b36e09
publicationDate 2013-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201314907-A
titleOfInvention a transistor containing a single layer of concave shape
abstract The present invention relates to a transistor comprising a substrate. A layer of conductive material having a thickness is disposed on the substrate. The layer of electrically conductive material has a concave profile such that one of the electrically conductive materials partially overhangs the other portion of the electrically conductive material. A layer of electrically insulating material having a thickness is profiled over the second layer of electrically conductive material, the layer of first electrically conductive material, and at least a portion of the substrate.
priorityDate 2011-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.