http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201312730-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-17772 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0944 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-1776 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2012-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6f7418368268d22895eaa80616e6ff4 |
| publicationDate | 2013-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201312730-A |
| titleOfInvention | Semiconductor device |
| abstract | The present invention proposes a semiconductor device having a novel structure. The semiconductor device includes a first p-type transistor, a second n-type transistor, a third transistor, and a fourth transistor. One of the source and the drain of the third transistor is connected to the wiring supplying the first potential, and the other is connected to one of the source and the drain of the first transistor. One of the source and the drain of the second transistor is connected to the other of the source and the drain of the first transistor, and the other is connected to one of the source and the drain of the fourth transistor. By. The other of the source and the drain of the fourth transistor is connected to a wiring supplying a second potential lower than the first potential. An oxide semiconductor material is used in the channel formation regions of the third transistor and the fourth transistor. |
| priorityDate | 2011-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 72.