| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb702ecd0dcde9bdd69b77181c60235c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C17-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C17-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C17-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate |
2012-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd7aa6286609dfd04957418242adbe8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9747a1c2437b81f64a7bd7008c0f004d |
| publicationDate |
2013-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201312703-A |
| titleOfInvention |
Electronic device including non-volatile memory structure with anti-fuse assembly and method of forming same |
| abstract |
An electronic device can include a non-volatile memory unit, wherein the non-volatile memory unit can include: an access transistor; a read transistor; and coupled to the access transistor and the read transistor An anti-fuse assembly. In one embodiment, the read transistor can include a gate electrode, and the anti-fuse assembly can include a first electrode and a second electrode overlying the first electrode. The gate electrode and the first electrode may be part of the same gate member. In another embodiment, the access transistor can include a gate electrode, and the anti-fuse assembly can include a first electrode, an anti-fuse dielectric material layer, and a second electrode. The electronic device can further include a conductive member overlying the antifuse dielectric material layer and a gate electrode of the access transistor, wherein the conductive member is configured to be electrically floating. The invention also discloses a method of making an electronic device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I786855-B |
| priorityDate |
2011-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |