| abstract |
Embodiments of the present invention provide a process for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy thereon. In one embodiment, a method of depositing a material on a surface of a substrate is provided, the method comprising the steps of: forming a barrier layer on a substrate, exposing the substrate during a vapor deposition process (eg, CVD or ALD) Toco-cobalt hexacarbonylbutylacetylene (CCTBA) and hydrogen (H2) form a cobalt layer on the barrier layer and deposit a conductive material on the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a processing such as a thermal process, an in-situ plasma process, or a remote plasma process. |