http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201308609-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2012-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8130af925c6a1eb094a233aaee403125
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publicationDate 2013-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201308609-A
titleOfInvention Method for forming a thin film transistor
abstract The present invention generally relates to a method of making a thin film transistor. The thin film transistor has an active channel including indium gallium zinc oxide or zinc oxide. The active channel is exposed to a nitrous oxide plasma or an oxygen plasma after the source electrode and the drain electrode are formed, but before the protective layer or etch stop layer is deposited thereon. During the formation of the source and drain electrodes, the interface between the active and protective or etch stop layers may be altered or damaged. The nitrous oxide plasma or oxygen plasma changes and repairs the interface between the active channel and the protective or etch stop layer.
priorityDate 2011-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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