http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201306251-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5231c81de1a546c1d6a9325c10910ce |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02543 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-167 |
filingDate | 2012-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa3fe7ef3b4dcdc4430ee4ec44bd6da7 |
publicationDate | 2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201306251-A |
titleOfInvention | Semiconductor structure having a nucleation layer to prevent interfacial charging of Group III-V materials on Group IV or IV-IV materials |
abstract | A semiconductor structure comprising: a Group IV material or a Group IV-IV material; an AlN layer on a surface of a Group IV material or a Group IV-IV material or a Group III nitride nucleation layer having an aluminum content of more than 60%, and nucleation A layer of III-V material on the layer, wherein the nucleation layer and the III-V material layer on the nucleation layer are different crystal structures. In a specific embodiment, the III-V nucleation layer is a nitride and the III-V material on the nucleation layer is not a nitride, such as an arsenide (such as GaAs), a phosphide (such as InP), or germanium. Compounds (such as InSb), or alloys of them. |
priorityDate | 2011-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.