| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2012-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98a50d21ceba6536a4663c7f4cff2d4e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_324fc8ab164289507a8a9391d7056b15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71d50a7293caba9c14997027f9784f5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0c9203dec70d7cfafab390869b80d61 |
| publicationDate |
2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201306139-A |
| titleOfInvention |
Method for processing oxide semiconductor film and method for manufacturing semiconductor device |
| abstract |
The present invention provides an oxide semiconductor film having a low resistance region which can be used for a transistor with high productivity. Further, the present invention provides a transistor using an oxide semiconductor film capable of high-speed operation with high productivity. Further, the present invention provides a high-performance semiconductor device having a transistor using an oxide semiconductor film capable of realizing high-speed operation with high productivity. Forming a film having a reductive property on the oxide semiconductor film, moving a part of oxygen from the oxide semiconductor film to the film having a reducing property, injecting impurities into the oxide semiconductor film through the film having a reducing property, and then removing the A reducing film, thereby forming a low resistance region in the oxide semiconductor film. |
| priorityDate |
2011-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |