| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2012-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d0bf63f024929a0f7e925d4edfed33e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf0a77ffc22328298fb7190ebe0dee35 |
| publicationDate |
2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201306129-A |
| titleOfInvention |
Semiconductor device manufacturing method |
| abstract |
An object of an embodiment of the present invention is to provide a method of fabricating a semiconductor device in which a content of water and hydrogen in an oxide semiconductor film is reduced, and oxygen for reducing oxygen deficiency is supplied from the base film to the oxide semiconductor In the film. A method of fabricating a semiconductor device according to an embodiment of the present invention includes the steps of: forming a laminated base film; performing a first heat treatment; forming an oxide semiconductor film on the laminated base film; and performing a second heating deal with. In the laminated base film, a first base film and an second base film are sequentially laminated, the first base film being an insulating oxide film that releases oxygen by heat treatment, in the second base film The diffusion coefficient of oxygen is smaller than the diffusion coefficient of oxygen in the first base film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10468514-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9755061-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I582994-B |
| priorityDate |
2011-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |