http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201306127-A

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filingDate 2012-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf0a77ffc22328298fb7190ebe0dee35
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publicationDate 2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201306127-A
titleOfInvention Semiconductor device and method of manufacturing same
abstract A semiconductor device having excellent electrical characteristics and a method of manufacturing the same are provided. A method for fabricating a semiconductor device includes the steps of: forming a gate electrode; forming a gate insulating film to cover the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming hydrogen over the oxide semiconductor film a permeable membrane; a hydrogen capture film formed over the hydrogen permeable membrane; a heat treatment performed to release hydrogen from the oxide semiconductor film; a source electrode and a drain electrode in contact with a portion of the oxide semiconductor film; and hydrogen removal removal The exposed portion of the film forms a channel protective film formed by the hydrogen permeable film. A semiconductor device manufactured by the above method is also provided.
priorityDate 2011-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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