| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2012-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_324fc8ab164289507a8a9391d7056b15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71d50a7293caba9c14997027f9784f5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b812b544e6107629454cc12a2c0bbda0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62bda92ebb6b753395cadcd2de2ad402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98a50d21ceba6536a4663c7f4cff2d4e |
| publicationDate |
2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201306100-A |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
One aspect of the present invention provides a semiconductor device that suppresses an increase in power consumption and that is miniaturized, and a method of manufacturing the semiconductor device. Further, an aspect of the present invention provides a highly reliable semiconductor device that imparts stable electrical characteristics and a method of manufacturing the semiconductor device. By irradiating the oxide semiconductor film with ions accelerated by an electric field to reduce the average surface roughness of the surface of the oxide semiconductor film, it is possible to suppress an increase in leakage current and power consumption of the transistor. Further, the oxide semiconductor film is formed to include crystals having a c-axis perpendicular to the surface of the oxide semiconductor film by heat treatment, and it is possible to suppress electrical characteristics of the oxide semiconductor film caused by irradiation of visible light or ultraviolet light. Variety. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I567823-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I569325-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105321826-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105321826-B |
| priorityDate |
2011-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |