abstract |
The present invention relates to a lithography process comprising using a ruthenium-containing polymer present in a photoresist material or a compound comprising at least one element selected from the group consisting of: EUV lithography procedures: Ta, W , Re, Os, Ir, Ni, Cu or Zn. The wavelength of the EUV light used in the program is less than 11 nm, for example, 6.5 nm to 6.9 nm. The invention further relates to novel ruthenium containing polymers. |