| abstract |
SUMMARY OF THE INVENTION The object of the present invention is to provide a photoresist underlayer film for a lithography process characterized by a high n-quality low-k quality, which can be made from a substrate in a three-layer process for combining a ruthenium-containing intermediate layer. The 193 nm light reflection has a reduced effect. A technical means for solving the problem is to provide a film forming composition for a photoresist under the lithography step of a polymer having a unit structure of a reactant having a condensed heterocyclic compound and a bicyclic compound. The condensed heterocyclic compound is an oxazole or a substituted carbazole. The bicyclic compound is dicyclopentadiene, substituted dicyclopentadiene, tetracyclo [4.4.0.12, 5.17, 10] dodecyl-3,8-diene, or substituted tetracyclic [4.4.0.12, 5.17, 10 】 Dodecyl-3,8-diene. |