http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201304178-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_86d23d211614284c46dd4f53a7710a7e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 |
| filingDate | 2011-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ece51bcbef9342d4fe7ea8de556354b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1b0c70193887cd8a64d23b55c98108f |
| publicationDate | 2013-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201304178-A |
| titleOfInvention | Thin film solar cell manufacturing method |
| abstract | A method of manufacturing a thin film solar cell. First, a first electrode layer is formed on a substrate; then a p-type semiconductor layer is formed on the first electrode layer; then an intrinsic layer is formed on the p-type semiconductor layer; then an n-type semiconductor layer is formed on the intrinsic layer And then treating the n-type semiconductor layer with a carbon dioxide plasma to form an oxide film layer; then hydrogenating the n-type semiconductor layer exposed to the oxide film layer with a high pressure hydrogen; finally forming a second electrode layer on the oxide film layer . |
| priorityDate | 2011-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.