http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201301405-A

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filingDate 2012-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09932973f1b813ee358d0f722fee1a93
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publicationDate 2013-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201301405-A
titleOfInvention Semiconductor device and method of manufacturing same
abstract The transistor including the oxide semiconductor film includes hydrogen (hydrogen capture film) for capturing oxide film from the oxide semiconductor film and hydrogen diffusion film (hydrogen permeable film) for diffusion of hydrogen from the oxide semiconductor by heat treatment. The membrane is transferred to the hydrogen capture membrane via a hydrogen permeable membrane. Specifically, the base film or the protective film of the transistor including the oxide semiconductor film has a stacked layer structure of a hydrogen scavenging film and a hydrogen permeable film. At this time, a hydrogen permeable film is formed on the side contacting the oxide semiconductor film. Thereafter, hydrogen released from the oxide semiconductor film is transferred to the hydrogen scavenging film via the hydrogen permeable membrane by heat treatment.
priorityDate 2011-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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