http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201301372-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
filingDate 2012-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b9840364c8e259c8429b78fcb4d574e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b02f0cc28fedfabe13f9ebf1e04fb619
publicationDate 2013-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201301372-A
titleOfInvention Semiconductor substrate and method of manufacturing same
abstract The invention relates to a method of manufacturing a semiconductor substrate, the method comprising the steps of: forming a donor substrate (1) comprising a support layer (2) composed of a first semiconductor material, and a semiconductor material comprising a strained seed layer (3), - making the support layer (2) porous, - treating the donor substrate (1) to expand or contract to form the first semiconductor material The porous support layer (2') is deformed, which causes relaxation in the seed layer (3'), and the seed layer (3' formed by the second semiconductor material is formed by one step of growing the second material. The thickness of the film is increased, forming a strain layer (5) which is in contact with the seed layer (3') and consists of a third semiconductor material, and - at least the strain layer (5) composed of the third material A portion is transferred from the donor substrate (1) to a receptor substrate (8).
priorityDate 2011-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419558793
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23950

Total number of triples: 17.