http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201250837-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_442006254efb98c9cebec6ee5a08d5e8
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
filingDate 2011-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_950cc5626a363ff6c2b6b0ed26c826d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1c0300fe6aab792af0204a3a96197b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d05e55a3664c47a15852e71463bb0f1f
publicationDate 2012-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201250837-A
titleOfInvention Method of preparing oxide film using electrolysis oxidation
abstract The present invention relates to a method of preparing oxide film using electrolysis oxidation. An anode and a cathode are placed into an electrolyte solution, wherein the anode is a substrate having conductive nitride film, and the temperature range of the electrolyte solution is greater than 20 degree Celsius and less than 100 degree Celsius. Afterward 50 V to 1000 V voltage is applied to the anode and the cathode. Finally, an oxide film is formed on the surface of the conductive nitride film of the anode. By comparing with a conventional method of preparing the oxide film, the present invention not only prepares the oxide film more quickly but also has better crystallization for the oxide film.
priorityDate 2011-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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