http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201246610-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_435f7fafc4b931eae59de228af7272de |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2012-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1519bf7ccc957d508fc9b9ebd683ddf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f05b31ff6d234c9228a525d17dc26f30 |
| publicationDate | 2012-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201246610-A |
| titleOfInvention | Semiconductor light emitting element and method of manufacturing the semiconductor light emitting element |
| abstract | A semiconductor light emitting element capable of suppressing occurrence of discoloration and of maintaining high optical output, and a method of manufacturing the semiconductor light emitting element. The method of manufacturing the semiconductor light emitting element includes steps of forming a semiconductor layer with stacking a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer 14 in this order, forming an electrode 20 containing a silver-containing layer 20a being in contact with an upper surface of the second conductive type semiconductor layer 14, and forming an insulating layer 22 covering from the upper surface of the second conductive type semiconductor layer 14 to at least side surfaces of the silver-containing layer 20a by way of atomic layer deposition. The semiconductor light emitting element includes a semiconductor layer, an electrode 20 formed on the semiconductor layer and containing a silver-containing layer 20a, and an insulating layer 22 covering from an upper surface of the second conductive type semiconductor layer 14 to side surfaces of the silver-containing layer 20a. The insulating layer 22 has approximately uniform thickness from the upper surface of the second conductive type semiconductor layer 14 to the side surfaces of the silver-containing layer 20a. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I610456-B |
| priorityDate | 2011-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.