| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B35-00 |
| filingDate |
2012-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c75c8b295786be1cae97522707d06a68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a253e4777d638c1d1dc2548035714236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d6cbb21664e258d9c4d6630863ec735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1932ee3508e5cc5e66a8634b04ede698
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5da4c8c5cf4a2dfef68f6fd8401874e |
| publicationDate |
2012-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201245511-A |
| titleOfInvention |
Growth of III-V LED stacks using nano masks |
| abstract |
Methods, semiconductor material stacks and equipment for manufacture of light emitting diodes (LEDs) with improve crystal quality. A growth stopper is deposited between nuclei for a group III-V material, such as GaN, to form a nano mask. The group III-V material is laterally overgrown from a region of the nuclei not covered by the nano mask to form a continuous material layer with reduced dislocation density in preparation for subsequent growth of n-type and p-type layers of the LED. The lateral overgrowth from the nuclei may further recover the surface morphology of the buffer layer despite the presence of the nano mask. Presence of the growth stopper may further result in void formation on a substrate side of an LED stack to improve light extraction efficiency. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I727360-B |
| priorityDate |
2011-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |