| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F20-22 |
| filingDate |
2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_464eb51a5a437677166a8551512254f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89abab811069c64e02454132b3ab9bc4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d784f46c5f35aad97341009ba5dad33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f73a270ddcc3792b1bff4740b69cbe1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8630c62dea6ad9b2c3a8e129c90d798
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8297b853c5bec78470e1916bd6427d8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcb2c4837169cb5346fc2ab4884a4187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7583c5ef3c449c07a1653717ed916d1a |
| publicationDate |
2012-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201245241-A |
| titleOfInvention |
Resist pattern formation method, radiation-sensitive resin composition, and resist film |
| abstract |
The present invention is a resist pattern formation method comprising (1) a step of forming a resist film having a surface free energy of 30 to 40 mN/m inclusive on a substrate using a radiation-sensitive resin composition, (2) a step of exposing the resist film by the irradiation with an radioactive ray through a mask, and (3) a step of developing the exposed resist film. It is preferred that the exposure in step (2) is performed through an immersion exposure solution that is placed on the resist film. It is also preferred that the radiation-sensitive resin composition comprises [A] a polymer containing a fluorine atom and [C] an acid generator. |
| priorityDate |
2011-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |